IR2113 APPLICATION NOTE PDF

The IR/IR are high voltage, high speed power. MOSFET and Please refer to our Application Notes and DesignTips for proper circuit board layout. APPLICATION NOTE. 1. GATE DRIVE REQUIREMENTS OF HIGH-SIDE DEVICES. The gate drive requirements for a power MOSFET or IGBT uti- lized as a high. Design and Application Guide of Bootstrap Circuit for. High-Voltage Gate-Drive IC. Rev. • 12/18/14 1. Introduction. The purpose of.

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I really don’t have time to go through all of this, but it sounds like you’re running into a cross-conduction problem due to insufficient “dead time”; and you’re running at some appljcation high frequencies. I just redid my calculation and the answer turns out to be the same. One question though – suppose I require a capacitor of 1uF.

High voltage half Bridge mosfet problem.

By clicking “Post Your Answer”, you acknowledge that you have read our updated terms of service nohe, privacy policy and cookie policyand that your continued use of the website is subject to these policies. For what its worth, by assuming that I can ignore capacitor leakage current and Vmin, I used the above expression and the values I found for a frequency applicatipn 50Hz.

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But you should test the circuit with a load, as in an SMPS, many unexpected things can happen if there is no load.

You may need a more capable gate driver IC. So you can troubleshoot the circuit somehow?

Then see if the other still gets hote. Home Questions Tags Users Unanswered. The value for 20kHz is 0. I just redid my calculation and the answer turns out to be the same. Is there a disadvantage to using a larger cap? Posted by iamhere in forum: Post Your Answer Discard By clicking “Post Your Answer”, you acknowledge that you have read our updated terms of serviceprivacy policy and cookie policyand that your continued use of the website is subject to these policies.

Your name or email address: Is there a drawback to having a large bootstrap applicarion Unfortunately, by looking at the suggested schematic see below I’m unable to understand what value should I be using for this. Sign up or log in Sign up using Google. Quote of the day. Should I use a 1uF cap. Pspice Simulation with IR Yes, my password is: The views expressed here are appljcation personal opinions, have not been reviewed or authorized by Infineon and do not necessarily represent the ur2113 of Infineon.

From the application notethe expression to find the bootstrap capacitor is as follows. Thank you very much.

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mosfet – Bootstrap Capacitor Selection with IR/3 – Electrical Engineering Stack Exchange

Results 1 to 2 of 2. Use of the information on noet site may require a license from a third party, or a license from Infineon.

Too high and some FETs will start to turn on only ones wity very low Vth. Infineon distances itself expressly from the contents of the linked pages, over the structure of which Infineon has no control. All postings and use of the content on this site are subject to the Usage Terms of the applicztion third parties using this content agree to abide by any limitations or guidelines and to comply with the Usage Terms of this site. The value for 20kHz is 0.

The datasheet states appliction minimum of 3. I cbs – leakBootstrap cap.

Hello, What driver chip are you using? If it does then it is not due to cross conduction. No license, whether express or implied, is granted by Infineon. Jun 30, If it does then cross conduction is highly likely.

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